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Giant Magnetoresistance Effect (GMR)

Electron scattering at the magnet/non-magnet interface in a magnetic layered structure depends on whether electron spin is parallel or antiparallel to the layer magnetic moment. It is observed that the resistance of the structure is much higher when the magnetic moments of the adjacent magnetic layers are aligned antiparallel than when they are parallel. Switching from the antiparallel to the parallel configuration can be achieved by an applied magnetic field. The effect is called giant magnetoresistance (GMR) and is illustrated in the enclosed figure. The GMR effect is exploited in magnetic field sensors and its applications range from automotive to information storage technology. We study GMR in the case when the current flows in the direction perpendicular to the layers. PRB 55, 14378 (1997).